Applications are invited from motivated and eligible candidates for the position of Project Associate-I for the project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)” under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST), Government of India in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya. The staff selected in this project will get a chance to fabricate the devices at Semiconductor Laboratory Chandigarh.
Principal investigator: Dr. PRADEEP KUMAR RATHORE (any queries should be communicated to pradeeprathore@nitm.ac.in)
No. of position available: One (01)
Eligibility Qualifications:
Position |
Qualifications |
Salary |
Project Associate-I
|
(a) B.Tech./M.Tech. in Electronics Engineering with specialization in Electronics / VLSI / MEMS and related areas, with a minimum of 60% marks.
(b) Upper Age limit: 35 years as on the last date of submission of application form. |
(i) 31,000/- + HRA to Scholars who are selected through (a) National Eligibility Tests - CSIR-UGC NET including lectureship (Assistant Professorship) or GATE or (b) A selection process through National level examinations conducted by Central Government Departments and their Agencies and Institutions.
(ii) 25,000/- + HRA for others who do not fall under (i) above. |
Duration: Initial appointment is for one year, which is extendable up to the end of the project duration based on the performance of the candidate.
General terms and conditions: